Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

نویسندگان

چکیده

2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, quantum properties. To realize technological potential TMDCs, methods depositing uniform films controlled thickness at low temperatures a highly controllable, scalable, repeatable manner needed. Atomic layer deposition (ALD) is chemical gas-phase thin film method capable meeting these challenges. In this review, applications evaluated for ALD TMDCs systematically examined, including electronics optoelectonics, electrocatalysis photocatalysis, energy storage, lubrication, plasmonics, solar cells, photonics. This review focuses on understanding interplay between precursors conditions, resulting characteristics such as thickness, crystallinity, morphology, ultimately device performance. Through rational choice observed to exhibit meet varying requirements widely different applications. Beyond current state future prospects, opportunities, challenges discussed. The authors hope that aids bringing together experts fields ALD, various eventually industrial TMDCs.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage

A new atomic layer deposition (ALD) process for V2O5 using ozone (O3) as oxidant has been developed that resulted in crystalline V2O5 thin films which are single-phase and orthorhombic on various substrates (silicon, Au-coated stainless steel, and anodic aluminum oxide (AAO)) without any thermal post-treatment. Within a fairly narrow temperature window (170−185 °C), this low temperature process...

متن کامل

Recent Development of Advanced Electrode Materials by Atomic Layer Deposition for Electrochemical Energy Storage

Electrode materials play a decisive role in almost all electrochemical energy storage devices, determining their overall performance. Proper selection, design and fabrication of electrode materials have thus been regarded as one of the most critical steps in achieving high electrochemical energy storage performance. As an advanced nanotechnology for thin films and surfaces with conformal interf...

متن کامل

2D electronics: From graphene to transition metal dichalcogenides to layered and tubular group V allotropes*

If graphene had a band gap, it would probably be the optimum 2D system for electronics applications. Layered transition metal dichalcogenides (TMDs) with a robust intrinsic band gap appear as the next-best alternative. Only after a long search, however, optimum strategies have been devised to make low-resistance, ohmic contacts to TMDs [1]. In the meantime, a new class of 2D semiconductors has ...

متن کامل

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decade...

متن کامل

Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers.

This commmunication presents a study of atomic layer deposition of Al2O3 on transition metal dichalcogenide (TMD) two-dimensional films which is crucial for use of these promising materials for electronic applications. Deposition of Al2O3 on pristine chemical vapour deposited MoS2 and WS2 crystals is demonstrated. This deposition is dependent on the number of TMD layers as there is no depositio...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Advanced Materials Interfaces

سال: 2021

ISSN: ['2196-7350']

DOI: https://doi.org/10.1002/admi.202001677